Fading of pMOS dosimeters over a long period of time

The fading of radiation-sensitive p-channel metal-oxide-semiconductor field-effect transistors (known as RADFETs or pMOS dosimeters) over a long time period 10 years after irradiation has been investigated. Fading is, in addition to sensitivity, another characteristic radiation dosimeters. It is considered the recovery threshold voltage irradiated dosimeters during ambient annealing without gate polarization. Usually, there are data for few months only. Although very important dosimetric characteristic, here it given first literature such time. Two types with oxide thicknesses 400 and 1000 nm used. They 5 V polarization on gate. For time, authors came significant result that key role applied irradiation, but not thickness oxide, have greater than voltage. Fitting shift fading, performed using radiation-induced Eγ Es traps, shows good agreement experimental values.